Chemical Solution-Based Synthesis of Nano-Magnesium Oxide Dielectrics

The effect of MgO nano-filler loading to the dielectric layer properties of nano-Mgo films has been studied. By using FESEM, the particle size of nano-MgO dielectrics was found in nanometer dimension with the range of 42 to 92 nm. The addition of MgO nano-filler resulted in surface modification in which it lead to the changes in dielectrics properties. From impedance analysis it shows that there were only small changes in relative permittivity value since the filler and the matrix were the same material. The result also revealed that the dielectrics with 1 wt% filler loading has good electrical properties while dielectrics 2 wt% filler loading was very uniform and compact.