Phase transformations of the amorphous Zn-Sb alloy under high pressures

Abstract Phase transformations occurring in initially amorphous Zn41 Sb59 semiconductor at pressures to 10 GPa and temperatures to 350C were studied using the measurement of electrical resistance, in situ energy dispersive X-ray diffraction and neutron diffraction on quenched high-pressure phases at ambient pressure. The studied T- P region involves the regions of reversible and irreversible crystallisation and phase transitions between the equilibrium crystalline low-pressure and high-pressure phases.