A nitride light emitting diode structure

The present invention provides a nitride light-emitting diode structure, comprising: a substrate, a buffer layer, N-type layer, a stress relief layer, a quantum well light emitting layer, P-type layer, wherein, in said N-type layer and the stress relief layer inserted between a growth temperature equal to or lower than the growth temperature of the quantum well layer of the light emitting field distribution layer, said electric field is a dispersion layer of n-doped GaN multilayer structure; different concentrations doped GaN layer gradually reducing the electric field aggregation, current uniformly dispersed, thereby improving the electrostatic breakdown voltage characteristics of the nitride semiconductor component, reducing the failure rate of the components used in the process, used to increase the reliability, extended service life.