New Aspects in n-type Doping of SiC with Phosphorus

One problem of doping efficiency by neutron transmutation is given by the low natural abundancy (about 3%) of the 30 Si isotope that gives rise to the transmutation process. In this combined theoretical and experimental work, neutron transmutation of 30 Si-enriched 6H-SiC and subsequent high temperature annealing is shown to provide a possibility to achieve efficient n-type doping of volume material with phosphorus yielding free carrier concentrations of 3·10 18 cm -3 and P Si donor levels at 70 meV and 85 meV.