Photoacoustic measurements of ion-implanted semiconductors

We have measured photoacoustic-signal amplitude and phase of ion-implanted semiconductors. The main factors which determine the photoacoustic behaviour of implanted samples are the opticalabsorption coefficient and the thermal conductivity of the implanted layer. For the thermal conductivity of such a layer a value has been found like that for vitreous materials. Experimental results are in agreement with theoretical models which describe the photoacoustic response of a two-layer sample.