Groove type Schottky diode

The invention belongs to the technical field of a semiconductor, and in particular relates to a groove type Schottky diode. The invention proposes the groove type Schottky diode. By filling a deep groove with Schottky metal, the effective area of a Schottky junction is expanded, and the current capability of the Schottky junction is improved; and meanwhile, a transverse electric field is introduced by a body electrode structure in a device drift region, the doping concentration of the drift region is appropriately increased, relatively high reverse breakdown voltage of the groove type Schottky diode is achieved, and meanwhile, the groove type Schottky diode has relatively low positive conduction voltage drop.