XRD, SEM and photoelectrochemical characterization of ZnSe electrodeposited on Cu and Cu–Sn substrates

Abstract XRD, SEM and photoelectrochemical examinations of deposits formed on the Cu substrate by electrochemical deposition in a water solution containing 0.2 mol dm −3 of ZnSO 4 and 0.002 mol dm −3 of H 2 SeO 3 were performed. Formation of Cu 2 Se x at potentials positive to that of electrochemical deposition of ZnSe was proved by the XRD technique. The formation of Cu 2 Se x continued even after deposition due to further diffusion of the deposited Se into Cu. A nano-crystalline ZnSe of cubic structure was electrodeposited at a potential of −0.62 V vs. Ag/AgCl electrode and XRD examination of deposits formed using cyclic potential scanning and pulse plating revealed the presence of hexagonal ZnSe along with the cubic one. A photoelectrochemical characterization proved that the electrodeposited ZnSe was a p-type semiconductor. A significant amount of Cu 2 Se x was formed during annealing of ZnSe electrodeposited on the Cu substrate although only traces of copper selenide were detected before the annealing. ZnSe, SnSe and a small quantity of Cu 2 Se x were detected by XRD after annealing of ZnSe electrodeposited on the Cu–Sn/Mo/glass substrate.