New Insights into the Off-state Stress Induced Degradation in Ultra-scaled FinFET Technology

Off-state device degradation has attracted growing attention in advanced technology node. In this paper, off-state stress induced degradation is comprehensively studied in ultra-scaled FinFETs. Based on the proposed characterization method, new degradation behaviors of device parameters are observed. It is found two competing physical mechanisms will impact the off-state device degradation. By the proposed separation approach, these two components are separated and modeled successfully. The results of this work are thus helpful to the reliability assessment of realistic circuits in nanoscale era.