Growth and characterization of bulk InGaN films and quantum wells

InGaN bulk layers and single quantum wells were grown by atmospheric pressure metalorganic chemical vapor deposition on c‐plane sapphire. We have found that the incorporation efficiency of indium into InGaN epitaxial layers is strongly dependent on the growth rate of the films. Narrow and bright band edge related luminescence was observed for InGaN films up to an indium content of 20% grown at 700 °C. In0.16Ga0.84N single quantum wells with graded InxGa1−xN barriers showed intense luminescence, with an energy shift towards shorter wavelength with decreasing quantum well thickness. The photoluminescence full width at half‐maximum of the 50 A thick well was as low as 7.9 nm (59 meV) at 300 K.