The Undestroying Quality Monitoring Method for the GaAs Detector Structures

G. I. Ayzenshtat,M. A. Lelekov,O. P. Tolbanov,L.G. Shapoval

The Undestroying Quality Monitoring Method for the GaAs Detector Structures

2007

G. I. Ayzenshtat
M. A. Lelekov
O. P. Tolbanov
L.G. Shapoval

We propose a new undestroying quality monitoring method for the GaAs detector structures that allows to define the charge collection efficiency. Measured life time of nonequilibrium electrons and holes is 15 and 3.3 ns, respectively.

Keywords:

Carrier lifetime
Detector
Gallium arsenide
Electronic engineering
Electron
Optoelectronics
Materials science
life time
quality monitoring

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