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InAlN/AlN/GaN HEMT Grown on 200 mm Si Substrate by Fast Rotating Single-Wafer MOCVD Tool
InAlN/AlN/GaN HEMT Grown on 200 mm Si Substrate by Fast Rotating Single-Wafer MOCVD Tool
2018
Masayuki Tsukui
Hajime Nago
Kiyotaka Miyano
Yasushi Iyechika
Hideshi Takahashi
Keywords:
Metalorganic vapour phase epitaxy
Substrate (chemistry)
Wafer
Analytical chemistry
High-electron-mobility transistor
Materials science
si substrate
Optoelectronics
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