Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure

Shallow silicided p+/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive‐in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO2/TiSi2 interface is identified for the first time in the form of B2O3. p+/n diodes and short‐channel metal‐oxide‐semiconductor field‐effect transistors with good electrical characteristics have been fabricated using doped silicide technology.