Ballistic charge carrier transmission through graphene multi-barrier structures in uniform magnetic field

We investigate charge carrier transport in graphene multi-barrier structures placed in a uniform magnetic field. The transmission coefficient is found analytically by generalizing the transfer matrix method for the case of graphene regions subjected to a uniform magnetic field. The transmission coefficient through the structure can be modulated by varying the gate voltages, the magnetic field and/or the width of the gated regions. Such a configuration could be used in multiple-valued logic circuits, since it has several output states with discrete and easily selectable transmission/current values.