Type-B epitaxial growth of CeO2 thin film on Si(111) substrate

Abstract CeO 2 has good lattice matching with Si and grows epitaxially on a clean surface of Si(111) under high vacuum. Type-B epitaxial growth was determined to be the most preferential for a CeO 2 film using four-circle X-ray diffraction. An explanation of the type-B growth is also discussed.