Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

One of the most important issues in the self‐aligned silicide technology has been lateral silicide formation over the sidewall oxide spacers. In this work, the lateral silicide growth has been considerably suppressed by the use of ion beam mixing and rapid thermal annealing. Metal‐oxide‐semiconductor transistors fabricated using this technology show good electrical characteristics with negligible conduction between gate and source/drain electrodes.