Critical Role of GIDL Current for Erase Operation in 3D Vertical FeFET and Compact Long-term FeFET Retention Model

We have investigated and revealed the critical role of GIDL current for efficient erase operation in 3D vertical FeFET by developing proper test structures and demonstrated a compact long-term FeFET retention model based on nucleation-limited switching, for the first time. We also proposed novel FeFET process for low voltage operation by controlling oxygen intrusion into the gate stack. This work contributes to the realization of high-density and low-power 3D vertical FeFET.