Preparing a metal thin film semiconductor compound

The present invention discloses a method for preparing a metal compound semiconductor thin film, the PVD method in the process of depositing a metal layer, a portion from the target into a plasma state, to produce a metal ion; and lined on the semiconductor substrate substrate bias, such that the metal ions are accelerated movement to the semiconductor substrate, and into the semiconductor substrate, so that the thickness of the thick metal-semiconductor compound film finally formed; and by controlling the semiconductor substrate added the substrate bias on the size, may regulate the amount of metal ions in the semiconductor substrate, thereby adjusting the thickness of the metal compound semiconductor thin film finally formed.