Surface-emitting type semiconductor laser, a surface emitting semiconductor laser array, the surface-emitting type semiconductor laser device, an optical transmission apparatus and an information processing apparatus

To provide a surface-emitting type semiconductor laser of the long cavity structure luminous efficiency is improved. A surface-emitting type semiconductor laser 10, on the substrate 100, n-type lower DBR 102, cavity extending region 104, a carrier blocking layer 105 including a first carrier blocking layer 105A and the second carrier blocking layer 105B configured active region 106, current confining layer 110, includes an upper DBR 108. The first carrier blocking layer 105A has a larger band gap than the second carrier blocking layer 105B, the second carrier blocking layer 105B is larger film thickness than the first carrier blocking layer 105A. .The