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A Transient Activation Model for Phosphorus After Sub-Amorphizing Channeling Implants
A Transient Activation Model for Phosphorus After Sub-Amorphizing Channeling Implants
1996
Puchner
Neary
Aronowitz
Selberherr
Keywords:
Annealing (metallurgy)
Semiconductor device modeling
Transient (oscillation)
Phosphorus
Silicon
transient analysis
activation model
Optoelectronics
Materials science
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