Optimized optical variables of 1.3µm GaInNAs/GaAs quantum well semiconductor laser

A quality improvement of the III–V dilute nitride semiconductor alloy, GaInNAs, grown on a GaAs substrate with different aperture sizes and nitrogen contents is reported for 1.31 µm wavelength lasers. It is expected that for GaInNAs, which is lattice matched to InP, band gaps from ≈0.3–0.7 eV should be achievable if a few percent of N could be incorporated to the structure. In this communication, we report the influence of nitrogen incorporation on the microstructure of dilute nitride films as well as the influence of the aperture size. The PL spectrum and material optical gain for GaInNAs with different N percentage have been investigated. The LI curve, optical power, wave intensity as well as threshold current for various aperture sizes have been reported.