Method for realizing near-infrared light emission of silica-based material by inserting bismuth ion into amorphous silicon-based functional film

The invention relates to a method for realizing near-infrared light emission of a silica-based material by inserting bismuth ions into an amorphous silicon-based functional film, which comprises the following steps of: 1) preparing an amorphous silicon-based film using a plasma enhanced chemical vapor deposition technique; and 2) inserting the bismuth ions into the amorphous silicon-based film, thus preparing an amorphous silicon nitrogen-oxygen film or an amorphous silicon-rich silicon dioxide with different inserted doses of bismuth ions, wherein during the inserting of the bismuth ions, the temperature of a substrate is room temperature, the injection energy is 200+/-50KeV, and the bismuth ion inserting range is from 1*10 /cm to 1*10 /cm . According to the invention, a plate capacitive radio frequency plasma enhanced chemical vapor deposition (PECVD) technology and an ion implantation technique are adopted to insert the bismuth ions of different doses into the amorphous silicon-based film, so that the stable and efficient near-infrared light photoluminescence at 1157nm can be observed successfully.