Formulation of a Self-Consistent Model for Quantum Well pin Solar Cells: Dark Behavior
1998
A self-consistent numerical simulation model for a pin single-cell solar cell is formulated.
The solar cell device consists of a p–AlGaAs region, an intrinsic i–AlGaAs/GaAs
region with several quantum wells, and a n–AlGaAs region. Our simulator solves a
field-dependent Schrodinger equation self-consistently with Poisson and drift-diffusion
equations. The field-dependent Schrodinger equation is solved using the transfer matrix
method. The eigenfunctions and eigenenergies obtained are used to calculate the escape
rate of carriers from the quantum wells, the capture rates of carriers by the wells, the
absorption spectra in the wells, and the non-radiative recombination rates of carriers in
the quantum wells. These rates are then used in a self-consistent finite-difference
numerical Poisson-drift-diffusion solver. We believe this is the first such comprehensive
model ever reported.
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