Dielectric behavior of La1-xCaxMnO3 (0.4 < x < 0.5)

In this work the dielectric behavior of semiconducting La-manganites in an intermediate Ca-doping regime is studied. Ceramic samples were prepared by conventional solid-state reaction, using elemental oxides as starting reactants. A chemical, structural and microstructural characterization of the prepared manganites was performed by iodometric titrations, X-ray diffraction and scanning electron microscopy, respectively. The magnetic susceptibility and electrical resistivity as a function of temperature were also measured. The complex dielectric permittivity of the samples was determined as a function of frequency and temperature. Very high values of dielectric constant in a wide frequency and temperature range were observed for all the synthesized samples. Moreover, an increase of the dielectric constant at temperatures close to chargeorder or metal-insulator transition is reported.