Manufacturing method of ferroelectric memory

The invention discloses a manufacturing method of a ferroelectric thin-film capacitor of a ferroelectric memory. The manufacturing method includes the steps of arranging and fixing a substrate layer 1, an upper electrode layer 2, an upper electrode buffer layer 3, a ferroelectric thin-film layer 4, a lower electrode buffer layer 5, a lower electrode layer 6, a bonding layer 7 and a barrier layer 8 sequentially in a bonded mode from top to bottom, wherein the barrier layer 8 is fixed to the silicon substrate layer 1 in a bonded mode, thiophene or a polymer of thiophene derivatives forms powder which is doped into a lead-zirconium-titanium thin-film layer to form the ferroelectric thin-film layer 4.