Metalorganic Surface Chemical Adsorption Deposition of AlN Films by Ammonia and Trimethylaluminum

Experiments were carried out ot investigate the feasibility of metalorganic surface chemical adsorption deposition (MOSCAD) for growing aluminum nitride (AlN). This technique tends to promote only surface reactions, confining the decomposition, interactions between intermediates and deposition processes necessary for crystal growth to the substrate surface. As a result, low-temperature deposition becomes possible. Epitaxial AlN growth was demonstrated at a temperature as low as 400 o C. The AlN film, grown at a rate of 1.5-2.0 μm/h, was visually observed to be transparent with a specular