Fast mask CD uniformity measurement using zero order diffraction from memory array pattern
2009
CD Uniformity (CDU) control is getting more concerning in lithographic process and required to control tighter as
design rule shrinkage. Traditionally CDU is measured through discrete spatial sampling based data and interpolated data
map represents uniformity trends within shot and wafer. There is growing requirement on more high sampling resolution
for the CDU mapping from wafer. However, it requires huge time consumption for CD measurements with traditional
methods like CD-SEM and OCD. To overcome the throughput limitation, there was an approach with inspection tool to
measure CD trends on array area which showed good correlation to the traditional CD measurement. In this paper, we
suggest a fast mask CD error estimation method using 0 th order of diffraction. To accomplish fast measurement, simple
macro inspection tool was adopted to cover full wafer area and scan result gives good correlation with mask uniformity
data.
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