Strained Engineered-Induced Mobility P+IN+ Photodiode—A Novel Opto-sensor for Biomedical Application

Nowadays, electrical switching circuits depend on PIN diode extensively. Non-invasive biomedical circuits are greatly influenced by the sensitivity of biosensors. The optical sensors are the key components in those circuits. The potential of PIN devices such as opto-sensors is studied in this paper. Si technology is the most mature one in modern industry. Therefore, the opto-sensitivity and photo-responsivity of the devices are studied by developing a quantum modified drift diffusion model. In this paper, the characteristics of PIN diode are studied which is made of silicon with a very small amount of carbon doping within it, and this strained material shows immense promise to the field of MMW and THz science and technology, and more precisely in biomedical domain for its modified band structure and electron transport characteristics, due to incorporation of artificial strain within this. Authors have studied the prospect of carbon doping selectively in Si PIN devices so as to increase the sensitivity of its application.