High-mobility p-type LixCuyO films prepared by plasma-enhanced atomic layer deposition and low-temperature annealing

Abstract High-mobility, p-type LixCuyO films are prepared by co-dosed plasma-enhanced atomic layer deposition. The x-ray diffraction patterns show that in addition to the CuO and Cu2O phases, the formed LiCu3O3 is responsible for the high mobility. The 350°C-annealed LixCuyO film has transmittance of 85% at mid-long wavelengths and bandgap of 2.4 eV. A hole mobility of 88 cm2V-1s-1 is reached, significantly higher than that of common p-type metal oxides.