Compressively-strained InGaAsP-active (/spl lambda/=0.85 /spl mu/m) VCSELs

We demonstrate that laser structures with InGaAsP-active/AlGaAs-confining layers are easy to implement into a conventional VCSEL design with good performance. The structures show performance similar to that of conventional GaAs-active layer VCSELs at /spl lambda/=0.85 /spl mu/m. Optimization of the compressive strain value in the active layer and implementation of strain-compensated InGaAsP/GaAsP/AlGaAs active regions is expected to further improve device performance.