STUDY OF NEUTRON IRRADIATED a-Si:H

Neutron transmutation doping (NTD) effect in hydrogenated amorphous silicon (a-Si:H) has been reexamined. There is no increase of both dark and photoconductivity of neutron irradiated a-Si:H after annealing at 180° C or 240° C. Our experimental results support Burnett et al. who contradict the finding that NTD in a-Si:H is effective by Hamanaka et al.