Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si/CaF2 structures

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF2 layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.