QUANTITATIVE ANALYSIS OF LOW-Z ELEMENTS IN TOTAL REFLECTION X-RAY FLUORESCENCE SPECTROSCOPY

In trace analysis of low-Z elements by a TXRF system, a correct estimation of th e backgrounds is very important . The backgrounds from th e tailin g o f a large Si-Kα peak are undesirabl e especially for the analysis of Al. Thus, X-ray radiation with excitation energies below the Si K absorption edge should be used to eliminate the Si-Kα peak. The W-Mα line from a W target and a radiation from a SR source are best for this purpose. The radiations with energy below the Si K absorption edge, however, create a background due to inelastic scattering from the existence of resonant X-ray Raman scattering. During an analysis of low-Z elements, the backgrounds caused by Raman scattering must be eliminated. We estimated theoretically th e profile of the continuous spectrum o f Rama n s cattering a nd applie d the profile fitting t echnique to analyz e thi n f ilms deposited on Si to determine s imultaneously th e concentrations of low -Z impu rities a nd the Raman backgr ounds. We f ound that th e Raman backgrounds are significan tly different depending on the X-ray incident angles and the film materials.