Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm

Abstract Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of many device characteristics. Such computations have been used for the study of SiGe/Si multiple quantum wells (MQWs) based infrared photodetectors operating in the two low absorption windows of silica fibers, e.g. around λ  = 1.3 and λ  = 1.55 µm. In this paper, a versatile model is proposed for the design optimization of SiGe/Si MQWs based photodetectors. It is based on the coupled Schrodinger–Poisson equations that allow the determination of the energy quantization levels and the wave functions of charge carriers. The optimum parameters such as the layers thickness, compositions and doping of the relative MQWs based p–i–n photodetectors under an external applied electric field are determined for the aimed range of wavelength.