Increased breakdown voltages in In/sub 1-x-y/Ga/sub x/Al/sub y/As/InAlAs FETs

The authors report the performance of In/sub 1-x-y/Ga/sub x/Al/sub y/As FETs lattice-matched to InP. An improvement in the drain-source breakdown voltage was achieved by adding Al in the channel of InGaAs/InAlAs FETs. The microwave gains are comparable to those of the InGaAs/InAlAs FETs. The DC and RF characteristics are discussed. >