Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD

Cubic SiC (3C-SiC) films were deposited on on-axis 6H-SiC (0001) substrates by low-pressure chemical vapor deposition (LPCVD). The result of X-ray diffraction patterns shows that the 3C-SiC films were of good crystalline quality. The influence of the growth parameters (flow rates of the gas sources and growth temperature) on the growth rate of the SiC films is discussed. The results show that the transport of silane or its reaction products is the limiting factor for the growth. The surface morphology of the SiC films was observed by atomic force microscope imaging. From these results it can be concluded that the growth of the films is in agreement with a Stranski-Krastanov growth mode.