Performance Analysis of AlGaN/GaN HEMT and MOSHEMT Devices Towards Circuit Application

Today's world is digital world or we can say electronics world. So basically technology goes on increasing day by day simultaneously the backbone of technology that is the semiconductor devices also plays important role to develop the technology world. But if we examine development of technology with the development of transistors are proportional to each others where as the transistors size is inversely proportional mean transistors size goes on decreasing which is terms as scaling which obeys the Moore's law. So the transistors size become smaller and smaller and the connection becomes shorter and shorter. Basically what happen if size of transistors goes on decreasing the capacitance decreases which decrease the delay to circuit so what will happen if delay will decrease no doubt speed will increase. So in order to develop a model for high speed, high frequency, high gain, high power and low noise a device was developed which is named as High Electron Mobility Transistors (HEMT). So as the technology demands goes on increase the importance of Silicon devices becomes elevated, that is why researchers developed a semiconductor device which is the mixture of group 111-V elements (GaAS, GaN etc.). So may question arise why researcher go for combination of group 111-V element because if we compare with Silicon then GaN has the material properties like bandgap energy, electron/hole mobility, electric background field, thermal conductivity, 2DEG density etc are much more greater than the silicon. In this paper we examined the DC characteristics of Aluminium gallium nitride and gallium nitride (AlGaN/GaN) HEMT by placing double oxide layers that are H f02/ Si02 in beneath of metal gate above AlGaN barrier layer. Also we compared the DC characteristics of AlGaN/GaN HEMT with Metal oxide semiconductor high electron mobility transistor (MOSHEMT). The DC characteristics of newly simulated MOSHEMT shows the superior performance as comparison to AlGaN/GaN HEMT. We simulated both the devices by using Synopsys Technology Computer Aided Design (TCAD) software. Various parameters were extracted from both the devices and came to conclusion that MOSHEMT shows enhanced performance over AlGaN/GaN HEMT.