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Expansion of Shockley Stacking Faults in 4H-SiC Epitaxial Layer by Forward Bias Current or Ultraviolet Irradiation
Expansion of Shockley Stacking Faults in 4H-SiC Epitaxial Layer by Forward Bias Current or Ultraviolet Irradiation
2019
Kazumi Takano
Yoshihiko Ohsaki
Yasuyuki Igarashi
Keywords:
Stacking
Irradiation
Silicon carbide
Ultraviolet
Biasing
Epitaxy
Optoelectronics
Materials science
ultraviolet irradiation
Correction
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