High performance W-band low-noise pseudomorphic InGaAs HEMT MMIC amplifiers

State of the art W-band low noise MMICs have been fabricated using pseudomorphic InGaAs HEMTs with a 0.1 mu m gate length. A two-stage LNA fabricated using this process has achieved a gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz, with a noise figure of 5.5 dB at 94 GHz. These results are the best reported to date for any MMIC LNA fabricated on both GaAs and InP substrates at this frequency range.