Enhanced photoelectrochemical performance of Zn2SnO4N by interstitial N induced the build-in polarization electric field

Abstract Highly active Zn 2 SnO 4 N photocatalysts were successfully prepared by the one-step microwave-assisted solvothermal method. N heteroatoms were introduced into Zn 2 SnO 4 by occupying the interstitial sites, inducing the formation of the build-in polarization electric field and the impurity level which was advantageous to promote the separation and the migration of photoinduced electron-hole pairs. As a result, the as-prepared Zn 2 SnO 4 N exhibited improved the photoelectrochemical properties and the photodegradation rate of RhB over Zn 2 SnO 4 N had been demonstrated to increase 3.3 times compared to that of pure Zn 2 SnO 4 . Under the effect of the built-in electric field, the impurity level served as a springboard for electron transition rather than a recombination center, which caused the enhancing photocatalytic performance. The finding may provide a new insight into understanding the mechanism of doping modification.