Fabrication and Characteristics Study of Bismuth Oxide/Silicon Heterojunction for Photodetector Applications

This work presents the fabrication of bismuth oxide/Silicon Heterojunction for Photodetector applications. Bismuth oxide nanoparticles investigation by simple chemical Tanique. The Bi2O3 thin film was deposited onto n-type Silicon and glass substrate by drop casting technique. The structural and optical properties of Bi2O3 thin film were studied; also, XRD show that the thin film is polycrystalline. The optical properties showed the having direct optical band gap of 2.5 eV, Dark and illuminated I-V, C-V, spectral responsivity and quantum efficiency of Bi2O3/n-Si photodetector ware investigated and discussed.