A Compact Physics-Based Charge Core Model for CAAC In-Ga-Zn Oxide Multi-Gate FETs

A new compact charge core model is proposed for accumulation-mode CAAC-IGZO FETs controlled with a FinFET-like common gate and a SOI-like independent bottom gate. The new core model accounts for all regions of device operation using only a fin cross-section area and gate perimeters as geometric parameters. The resulting compact model is verified in extractions from CAAC-IGZO FETs measured characteristics for different device sizes and temperatures.