Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications

A power amplifier cell having a single n-channel transistor fabricated in 45-nm RFSOI technology is stressed using both DC drain voltage as well as RF power at 7GHz applied to the gate reproducing Wi-Fi6 like operating conditions. Impact of the stress is studied using both DC as well as RF metrics. Impact on impedance matching is also studied using small signal characteristics. Through this work, we attempt to explore differences in hot carrier degradation mechanisms between DC and RF stress conditions. Impact of hot carrier degradation on DC and RF parameters is also presented by analyzing the time slope exponent. Degradation in DC and RF performance (small and large signal) is compared under varying stress conditions (DC, RF, and DC+RF).