Old Web
English
Sign In
Acemap
>
Paper
>
A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
2010
Miyaji Kousuke
Noda Shinji
Hatanaka Teruyoshi
Takahashi Mitsue
Sakai Shigeki
Takeuchi Ken
Keywords:
Parallel computing
NAND gate
Ferroelectricity
Computer science
Computer hardware
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]