A semiconductor memory, the semiconductor memory system, and method of manufacturing the quantum dot used in a semiconductor memory using the same

A semiconductor memory having improved possible composite floating gate constituting a retention characteristic information. A semiconductor memory (110), on the insulating film formed on the semiconductor substrate (101) (105), quantum dots (311) laminated made of Si were coated with an extremely thin Si oxide film, on the high dielectric constant quantum dots coated with an insulating film (322) and (321) are laminated, further comprising a composite floating structure formed by laminating the high dielectric constant insulating film (412) made of Si were coated with quantum dots (411) to. Quantum dots (321) is composed of a core layer (3211), a cladding layer covering the core layer (3211) and (3212). The electron occupation level of the core layer (3211) is lower than the electron occupancy level in the cladding layer (3212). .FIELD 4