Characterization of charging effect of citrate-capped Au nanoparticle pentacene device

Abstract Capacitance–voltage hysteresis for a non-volatile memory was realized in a metal–pentacene–insulator–silicon (MPIS) device using gold (Au) nanoparticles (NPs) intervened between pentacene and SiO 2 insulator. A memory window higher than 2.0 V was obtained under (±) 5 V programming sweeping range. The SiO 2 as thick as 30 nm was adopted as the dielectric layer, and 3-aminopropyl-triethoxysilane (APTES) was used for self-assembling of Au NPs monolayer. In addition, citrate-functionalized Au NPs was dip-coated and used as charge storage elements. Formation of a monolayer of the Au NPs was confirmed by HR-SEM and AFM. Capacitance–voltage hysteresis in this study was resulted from the charge storage in the layer of Au NPs.