Xerographic measurements in compensated hydrogenated amorphous silicon

Xerographic discharge measurements are reported on 10‐μm‐thick compensated hydrogenated amorphous silicon samples for doping levels as high as 5000 ppm by weight. Excellent xerographic characteristics including photosensitivity, charge acceptance, and hole range are maintained up to doping levels ∼ 100 ppm by weight. Beyond this both charge acceptance and hole range degrade due to associated increases in mid‐gap‐state densities.