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A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy
A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy
1997
Xiaoping Shao
Sean L. Rommel
B. A. Orner
J. Kolodzey
Paul R. Berger
Keywords:
Chemistry
Heterojunction
Analytical chemistry
Breakdown voltage
Molecular beam epitaxy
Quantum efficiency
Diode
Correction
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