High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

We report the molecular beam epitaxy growth of (Al)GaSb/AlSb Bragg mirrors around the 1.55 μm wavelength region. Mirrors with 97% reflectivity have been achieved by using 10 pairs of (Al)GaSb (1048 A) and AlSb (1207 A) quarter wavelength layers. This demonstrates the capability of the antimonide system to obtain efficient Bragg mirrors grown on GaAs substrates.