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Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy
Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy
2007
Kannappan Santhakumar
J.S. Kim
Cheul-Ro Lee
R. Kesavamoorthy
K.G.M. Nair
P. Jayavel
Y. Hayakawa
Tetsuo Soga
Keywords:
Ion implantation
Nuclear magnetic resonance
Raman scattering
Raman spectroscopy
Gallium arsenide
Annealing (metallurgy)
Physics
semi insulating
Correction
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