eg−t2g Sub band splitting via crystal field and band anticrossing interaction in NixCd1-xO thin films

Abstract In the present work, full composition range of NixCd1-xO thin films, from Cadmium oxide to Nickel oxide are prepared with sol-gel chemical synthesis route on corning glass substrates. The Fourier transform infrared spectra provide a direct indication of compositional dependence for different vibrational modes with increasing Ni doping. The microscopy images reflect the reduced crystallinity and closely packed morphology with increasing Ni doping which endorses the changes reflected in electronic structure. The O K edge, soft X-ray absorption spectra (XAS) for thin films indicate a clear evidence of eg and t2g sub band splitting and has been explained via crystal field splitting and three level band anti-crossing (BAC) interaction phenomena. At higher doping fraction, the inhomogeneous electric field of neighboring ions surrounding the unfilled Ni 3d level results in rupturing of L − S coupling and further crystal field splitting. The BAC interaction brings about partially unoccupied localized Ni 3d and empty d acceptor levels above conduction band minima (CBM). As saturated Fermi level goes below CBM with increasing Ni doping, transitions to antibonding orbital [eg( π * ) and t2g( σ * )] with finite energy difference, is reflected as separated eg-t2g peaks in XAS spectra. On the other hand, extended X-ray absorption fine structure for Ni K edge fitting provides a complete information for nearest (Ni-O) and next nearest (Ni-Ni) neighbor bond length.